Tzach Jaffe, Mohammed Attrash, Mohan Kumar Kuntumalla, Roza Akhvlediani, Shaul Michaelson?, Lior Gal, Nina Felgen, Miri Fischer, Johann Peter Reithmaier, Cyril Popov, Alon Hoffman, and Meir Orenstein. Andrew & Erna Viterbi Department of Electrical Engineering, Technion, Schulich Faculty of Chemistry, Technion, Israeli Center of Advanced Diamond Technology (ICDAT), Institute of Nanostructure Technologies and Analytics, University of Kassel, Germany.
We introduce and demonstrate a new approach for nitrogen-vacancy (NV) patterning in diamond, achieving a deterministic, nanometer-thin, and dense delta-doped layer of negatively charged NV centers in diamond. We employed a pure nitridation stage using microwave plasma and a subsequent in situ diamond overgrowth. We present the highest reported nitrogen concentration in a delta-doped layer (1.8 × 1020 cm–3) while maintaining the pristine diamond crystal quality. This result combined with the large optically detected magnetic resonance contrast can pave the way toward highly sensitive NV-based magnetometers. We further employed this delta-doping technique on high-quality fabricated diamond nanostructures for realizing a topographic NV patterning in order to enhance the sensing and hyperpolarization capabilities of NV-based devices.
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